Work

Steady-state and transient defect populations in KH 2 PO 4 subsequent to high-fluence laser irradiation

Year: 1999

Type: conference-paper

Abstract: Microscopic fluorescence imaging and time-resolved Raman scattering are employed to investigate the effect of high power 355 nm laser irradiation on preexisting and transient defect populations in KH2PO4. Defect clusters in the bulk of KDP crystals are imaged with 1 micron spatial resolution using their NIR emission. The intensity of the emission clusters varies widely within the image field. The exposure of the crystal at high power 355 nm, 3 ns laser irradiation leads to a reduction of the number of observed optically active centers. In addition, time resolved Raman scattering was employed to study the transient generation of defects during high power 355 nm laser irradiation.

Source: Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

DOI: 10.1117/12.349237

Authors: Stavros G. Demos, Michael C. Staggs, Harry B. Radousky, James J. De Yoreo

Institution: Lawrence Livermore National Laboratory

Language: English

Topic: Laser Material Processing Techniques

Subfield: Computational Mechanics

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1980969184

FWCI: 0.91

Cites: 6

Cited by: 2

Related to: 10