Single-Source Precursor for Tungsten Dichalcogenide Thin Films: Mo1– x W x S2 (0 ≤ x ≤ 1) Alloys by Aerosol-Assisted Chemical Vapor Deposition
Year: 2017
Type: article
Abstract: The coordination complex WS3L2 (where L = S2CN(CH2CH3)2 ) can be used to deposit tungsten disulfide (WS2) thin films by aerosol-assisted chemical vapour deposition (AACVD). When WS3L2 is used in conjunction with the previ-ously reported precursor, MoL4 which produces molybdenum disulfide (MoS2) by AACVD, alloyed thin films of the type Mo1-xWxS2 are produced. The W/Mo ratio can be controlled by chang-ing the relative concentrations of precursors in the carrier aerosol, allowing straightforward manipulation of the optical properties of the material and exquisite control of the final film composition.
Source: Chemistry of Materials
Institution: University of Manchester
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,299
OpenAlex ID: W2606437304