Year: 1991
Type: article
Abstract: Mg2Si0.6Ge0.4 solid solution semiconductor was prepared by direct melting, where the reaction between samples and graphite crucible was suppressed using NaCl flux. Carrier concentrations were controlled in the regions of 6.5×1024∼1.5×1026 electrons/m3 and 1.0×1024∼5.5×1025 holes/m3 by doping Sb and Ag, respectively. Thermal conductivity k was measured at 300 K for Sb-doped samples. By calculating the electronic thermal conductivity kel based on the Fermi integrailon, the lattice thermal conductivity kph was estimated to be 2.10 Wm−1K−1. Figure-of-merits Z, of Mg2Si0.6Ge0.4 at 300 K were 0.69×10−3 K−1 for the n-type sample with an electron concentration of 5.4×1025 m−3 (3000 ppm Sb) and 0.47×10−3 K−1 for p-type one with a hole concentration of 5.2×1025 m−3 (16000 ppm Ag).
Authors: Hiroyuki Kon, Yasutoshi Noda, Yoshitaka Furukawa, Isao Nishida, Katashi Masumoto
Institutions: Tohoku University, Ishinomaki Senshu University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2606743228