Work

Thermoelectric Properties of FeSi2-Base Semiconductors with Ag Addition

Year: 1994

Type: article

Abstract: The objective of this paper is to fabricate a thermoelectric semiconductor with high-generating power. After powders were prepared from the melt-spun ribbons of FeSi2-1 at%M (M=B, Mn, Co) which were made by a single roll method, they were sintered with Ag-powder or AgNO3-solution. When the powders of FeSi2-1 at%Co were sintered with AgNO3-solution, the large power factor is obtained due to the reduced electrical resistivity.

Source: Journal of the Japan Institute of Metals and Materials

DOI: 10.2320/jinstmet1952.58.3_353

Authors: Tetsuya Watanabe, Masayuki Hasaka, Takanori Miyase

Institutions: National Institute of Technology, Sasebo College, Nagasaki University

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: bronze

OpenAlex ID: W2607118997

FWCI: 0.338

Cites:

Cited by: 14

Related to: 10