Year: 2017
Type: article
Abstract: Broad area lasers emitting near 940 nm are fabricated using a process based on two-step epitaxy. The n-side of the layer structure and the active layer are grown during the first epitaxial step, the p-side during the second. Between the first and the second step a shallow etching is used to remove the active layer from the two sides and at the two facets. This simple approach allows the creation of buried mesa lasers with non-absorbing mirrors, resulting in a reduced lateral current leakage, lower threshold current and higher efficiency, plus an increased robustness with respect to catastrophic optical damage.
Institution: Ferdinand-Braun-Institut
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2607251014