Work

Solution-processed indium-zinc-oxide thin-film transistors from a fast and stable pre-annealing process with a femtosecond laser

Year: 2017

Type: article

Source: Journal of the Korean Physical Society

DOI: 10.3938/jkps.70.872

Authors: Fei Shan, Sung-Jin Kim, Yu Zhao, Nam Kim, Seong Gon Choi, Seung Wook Chang

Institutions: Chungbuk National University, Samsung (South Korea), Samsung Display (South Korea)

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2612274222

FWCI:

Cites: 25

Cited by:

Related to: 10