Work

Quasi-Two-Dimensional h-BN/β-Ga 2 O 3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor

Year: 2017

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.7b04374

Authors: Janghyuk Kim, Michael A. Mastro, Marko J. Tadjer, Jihyun Kim

Institutions: Korea University, United States Naval Research Laboratory

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation, Korea University, National Research Foundation of Korea, Korea Institute of Energy Technology Evaluation and Planning

Awards: G3862022512, G6458345048

OpenAlex ID: W2617293466

FWCI: 4.973

Cites: 41

Cited by: 125

Related to: 10