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InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD

Year: 2010

Type: article

Source: IEICE Technical Report; IEICE Tech. Rep.

Authors: Miyoshi Makoto, S. Sumiya, Ichimura Mikiya, Tomohiko Sugiyama, Sota Maehara, Tanaka Mitsuhiro, Takashi Egawa

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2620407271

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