Work

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Year: 2008

Type: article

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2008.04.005

Authors: B. Raeissi, J. Piscator, O. Engström, S. Hall, O. Buiu, M.C. Lemme, H.D.B. Gottlob, P.K. Hurley, K. Cherkaoui, H.J. Osten

Institutions: Chalmers University of Technology, University of Liverpool, AMO (Germany), University College Cork, Tyndall National Institute, Leibniz University Hannover

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2626015659

FWCI: 4.483

Cites: 19

Cited by: 34

Related to: 10