Work

Improving Analog Switching in HfO x -Based Resistive Memory With a Thermal Enhanced Layer

Year: 2017

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2017.2719161

Authors: Wei Wu, Huaqiang Wu, Bin Gao, Ning Deng, Shimeng Yu, He Qian

Institutions: Tsinghua University, Arizona State University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Beijing Council of Science and Technology

Awards: G4065806536, G4512018080, G4722866509, G489761411, G995146842

OpenAlex ID: W2662553141

FWCI: 10.52

Cites: 12

Cited by: 281

Related to: 10