Work

Stoichiometric control for heteroepitaxial growth of smooth ε-Ga 2 O 3 thin films on c -plane AlN templates by mist chemical vapor deposition

Year: 2017

Type: article

Abstract: Epitaxial ε-Ga 2 O 3 thin films with smooth surfaces were successfully grown on c -plane AlN templates by mist chemical vapor deposition. Using X-ray diffraction 2θ–ω and φ scans, the out-of-plane and in-plane epitaxial relationship was determined to be (0001) ε-Ga 2 O 3 ∥ (0001)AlN . The gallium/oxygen ratio was controlled by varying the gallium precursor concentration in the solution. While scanning electron microscopy showed the presence of large grains on the surfaces of the films formed for low concentrations of oxygen species, no large grains were observed under stoichiometric conditions. Cathodoluminescence measurements showed a deep-level emission ranging from 1.55–3.7 eV; however, no band-edge emission was observed.

Source: Japanese Journal of Applied Physics

DOI: 10.7567/jjap.56.078004

Authors: Daisuke Tahara, Hiroyuki Nishinaka, Shota Morimoto, Masahiro Yoshimoto

Institution: Kyoto Institute of Technology

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funders: Shanghai Educational Development Foundation, National Chiao Tung University, Japan Society for the Promotion of Science

Award: Hetero-junction devices of epsilon-Ga2O3 semiconductors by mist CVD technique