Work

Molecular Layer-seeded Ultra-thin Top-gate Dielectrics for High Transconductance Graphene Transistors

Year: 2012

Type: article

Source: Bulletin of the American Physical Society

Authors: Vinod K. Sangwan, Deep Jariwala, Hunter J. Karmel, Justice M. P. Alaboson, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2725435745

FWCI: 0.147

Cites:

Cited by: 1

Related to: 10