Work

Structural properties and parameters of epitaxial silicon carbide films, grown by atomic substitution on the high-resistance (111) oriented silicon

Year: 2017

Type: article

Source: Superlattices and Microstructures

DOI: 10.1016/j.spmi.2017.07.050

Authors: S.A. Kukushkin, K. Kh. Nussupov, A.V. Osipov, N.B. Beisenkhanov, D.I. Bakranova

Institutions: ITMO University, Peter the Great St. Petersburg Polytechnic University, Institute of Problems of Mechanical Engineering, Kazakh-British Technical University, Institute of Physics and Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Russian Foundation for Basic Research, Ministry of Education and Science

Awards: G266093768, G2822528464, G6203158381, G8513304219

OpenAlex ID: W2740321868

FWCI: 0.675

Cites: 33

Cited by: 15

Related to: 10