The Influence of the Configuration to the Performance of Thermoelectric Elements made by SiGe p-type and n-type semiconductors
Year: 2003
Type: article
Abstract: The simulation model of the two types of thermoelectric elements is made by using Finite Difference Method. The simulated results are compared to the experimental data. In spite of the large resistance in the experimental data, calculated results are in agreement with experimental data. An optimum configuration of the thermoelectric element is obtained.
Authors: Tomoaki TSUJI, Naotake NODA
Institutions: Chuo University, Shizuoka University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W2744075461
