Work

Interlayer bond polarizability model for stacking-dependent low-frequency Raman scattering in layered materials

Year: 2017

Type: article

Abstract: , GaSe, h-BN, etc. Additionally, a general strategy is proposed to unify the stacking nomenclature for these 2D materials. Our model reveals the fundamental mechanism of LF Raman response to the stacking, and provides general rules for stacking identification.

Source: Nanoscale

DOI: 10.1039/c7nr05839j

Authors: Liangbo Liang, Alexander A. Puretzky, Bobby G. Sumpter, Vincent Meunier

Institutions: Oak Ridge National Laboratory, Rensselaer Polytechnic Institute, Center for Nanophase Materials Sciences

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2744910745

FWCI: 2.598

Cites: 80

Cited by: 53

Related to: 10