Work

[INVITED] Advances in nitride film and coating growth by chemical vapor deposition

Year: 2017

Type: article

Source: The Japan Society of Applied Physics

Authors: M. Pons, Danying Chen, Manoël Jacquemin, Juan Su, Raphaël Boichot, F. Mercier, E. Blanquet, S. Lay

Institution: Université Grenoble Alpes

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2747097299

FWCI:

Cites:

Cited by:

Related to: 10