Work

Optimization of Empirical Modelling of Advanced Highly Strained In0.7Ga0.3As/In0.52Al0.48As pHEMTs for Low Noise Amplifier

Year: 2017

Type: article

Abstract: An optimized empirical modelling for a 0.25µm gate length of highly strained channel of an InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs–InAlAs material systems is presented. An accurate procedure for extraction is described and tested using the pHEMT measured dataset of I-V characteristics and related multi-bias s-parameters over 20GHz frequency range. The extraction of linear and nonlinear parameters from the small signal and large signal pHEMT equivalent model are performed in ADS. The optimized DC and S-parameter model for the pHEMT device provides a basis for active device selection in the MMIC low noise amplifier circuit designs.

Source: International Journal of Electrical and Computer Engineering (IJECE)

DOI: 10.11591/ijece.v7i6.pp3002-3009

Authors: W.M. Jubadi, F. Packeer, M. Missous

Institutions: Tun Hussein Onn University of Malaysia, Universiti Sains Malaysia, University of Manchester

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

Funders: Universiti Tun Hussein Onn Malaysia, University of Manchester

OpenAlex ID: W2754593789

FWCI: 0.114

Cites: 10

Cited by: 4

Related to: 10