Year: 2008
Type: conference-abstract
Abstract: The erbium-doped silicon nanocables are fabricated via the vapor transport and condensation method using the ErCl 3 ．6H 2 O as the doping source.The doping concentration of erbium in the silicon nanocables could be controlled via varying the quantity of the doping source.The average doping concentration would be 0.73, 1.13, and 2.23 at.% with using the different quantities of the doping source, 0.5g, 1.0g, and 1.5g, respectively.The incorporation of the erbium into the silicon nanocables will endow silicon nanocbles with the vital 1.54 µm light-emitting property, suitable for telecommunication, from the 4 I 13/2 → 4 I 15/2 luminescent transition.Erbium-doped silicon nanocales have the potential for future applications of photonics nanodevices.
Source: ECS Meeting Abstracts
Authors: Chi-Te Huang, Chung Lee, Mei-Lin Ho, Wei-Fan Lee, Chen-Ho Lai, Pi-Tai Chou, Li Chen
Institutions: National Tsing Hua University, National Taiwan University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2755710105