Work

Kinetic pathway of the ferroelectric phase formation in doped HfO2 films

Year: 2017

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.5003918

Authors: Lun Xu, Tomonori Nishimura, Shigehisa Shibayama, Takeaki Yajima, Shinji Migita, Akira Toriumi

Institutions: National Institute of Advanced Industrial Science and Technology, The University of Tokyo

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Core Research for Evolutional Science and Technology

Award: G6133037600

OpenAlex ID: W2757550265

FWCI: 6.824

Cites: 35

Cited by: 219

Related to: 10