Work

Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers

Year: 2017

Type: article

Source: Nanoscale

DOI: 10.1039/c7nr04431c

Authors: Jing Wang, Qikun Huang, Peng Shi, Kun Zhang, Yufeng Tian, Shishen Yan, Yanxue Chen, Guolei Liu, Shishou Kang, Liangmo Mei

Institutions: Shandong University, State Key Laboratory of Crystal Materials

Language: English

Topic: Magnetic properties of thin films

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G1353207948, G2253318301, G5718010965, 新型自旋记忆电阻磁隧道结的制备及其输运特性的研究

OpenAlex ID: W2760299569

FWCI: 0.901

Cites: 25

Cited by: 8

Related to: 10