Deposited low temperature silicon GHz modulator
Year: 2013
Type: article
Abstract: We demonstrate gigahertz electro-optic modulator fabricated on low temperature polysilicon using excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved. These results open up an array of possibilities for silicon photonics including photonics on DRAM and on flexible substrates.
Source: Optics Express
DOI: 10.1364/oe.21.026688
Institution: Cornell University
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,270
Awards: G3576276198, G5040812755, G5290196716, Nanophotonic Interconnect CAD: Automated Design for Nanophotonic Enabled Interconnect in Multicore Architectures, EAGER: Overcoming Thermal Sensitivity of CMOS-Compatible Nanophotonic Devices in Future Microprocessor Designs, NNIN: National Nanotechnology Infrastructure Network, G7234798665, NSF Engineering Research Center for Integrated Access Networks (CIAN), G8246966300
OpenAlex ID: W2761469874