Work

Overcoming Si_3N_4 film stress limitations for high quality factor ring resonators

Year: 2013

Type: article

Abstract: Silicon nitride (Si₃N₄) ring resonators are critical for a variety of photonic devices. However the intrinsically high film stress of silicon nitride has limited both the optical confinement and quality factor (Q) of ring resonators. We show that stress in Si₃N₄ films can be overcome by introducing mechanical trenches for isolating photonic devices from propagating cracks. We demonstrate a Si₃N₄ ring resonator with an intrinsic quality factor of 7 million, corresponding to a propagation loss of 4.2 dB/m. This is the highest quality factor reported to date for high confinement Si₃N₄ ring resonators in the 1,550 nm wavelength range.

Source: Optics Express

DOI: 10.1364/oe.21.022829

Authors: Kevin Luke, Avik Dutt, Carl B. Poitras, Michal Lipson

Language: English

Topic: Photonic and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,270