Work

An analytical model for submicron dual material gate GaNMESFET including the temperature effects

Year: 2017

Type: conference-paper

Source: International Conference on Green Energy Conversion Systems (GECS)

DOI: 10.1109/gecs.2017.8066258

Authors: Nacereddine Lakhdar, Brahim Lakehal

Institutions: University of Eloued, University of Ouargla

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2762855531

FWCI:

Cites: 16

Cited by:

Related to: 10