Year: 2017
Type: article
Abstract: We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.
Source: Review of Scientific Instruments
DOI: 10.1063/1.5001520
Authors: J. L. Pacheco, M. Singh, D. L. Perry, J. R. Wendt, G. Ten Eyck, R. P. Manginell, T. Pluym, D. R. Luhman, M. P. Lilly, M. S. Carroll, E. Bielejec
Institution: Sandia National Laboratories
Language: English
Subfield: Computational Mechanics
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2765407334