Work

Influence of High-Energy Proton Irradiation on β-Ga 2 O 3 Nanobelt Field-Effect Transistors

Year: 2017

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.7b13881

Authors: Gwangseok Yang, Soohwan Jang, Fan Ren, Stephen J. Pearton, Jihyun Kim

Institutions: Korea University, Dankook University, University of Florida

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation of Korea, Defense Threat Reduction Agency, Korea Institute of Energy Technology Evaluation and Planning

Awards: G171012347, G4902162394, G7949355915

OpenAlex ID: W2765567326

FWCI: 5.348

Cites: 41

Cited by: 148

Related to: 10