Ultraviolet photodetector using pn junction formed by transferrable hollow n-TiO_2 nano-spheres monolayer
Year: 2017
Type: article
Abstract: monolayer/p-GaN was 0.203 A/W at 312 nm and 0.093 A/W at 327 nm, respectively.
Source: Optics Express
DOI: 10.1364/oe.25.030843
Authors: Taeyoung Yang, Seong-jin Park, Taek Gon Kim, Dong Su Shin, Kyung-do Suh, Jinsub Park
Institution: Hanyang University
Language: English
Field: Energy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,270
Award: G3288801657
OpenAlex ID: W2769309453
