Work

Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs

Year: 2017

Type: article

Source: Microelectronics Reliability

DOI: 10.1016/j.microrel.2017.11.020

Authors: Thomas Aichinger, Gerald Rescher, Gregor Pobegen

Institution: Infineon Technologies (Austria)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2770666768

FWCI: 7.808

Cites: 56

Cited by: 289

Related to: 10