Work

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

Year: 2017

Type: article

Source: Nature Materials

DOI: 10.1038/nmat5028

Authors: Jun Jiang, Zi Long Bai, Zhi Hui Chen, Long He, David Wei Zhang, Qing Hua Zhang, Jin An Shi, Min Hyuk Park, James F. Scott, Cheol Seong Hwang, An Quan Jiang

Institutions: Fudan University, State Key Laboratory of ASIC and System, Chinese Academy of Sciences, Institute of Physics, Seoul National University, University of St Andrews, University of Cambridge

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2770927650

FWCI: 10.92

Cites: 48

Cited by: 240

Related to: 10