Deep-ultraviolet photodetector based on exfoliated n-type β-Ga2O3 nanobelt/p-Si substrate heterojunction
Year: 2017
Type: article
Authors: Gahyun Shin, Hong-Yeol Kim, Jihyun Kim
Institution: Korea University
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2775278910
