Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage
Year: 2017
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4998311
Institutions: Mitsubishi Electric (Japan), Tokyo Institute of Technology
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2775776374