An Investigation of the Role of Radiative and Nonradiative Recombination Processes in InAs/GaAs $_{1-x}$ Sb $_{x}$ Quantum Dot Solar Cells
Year: 2018
Type: article
Abstract: An InAs/GaAs0.86Sb0.14quantum dot solar cell and a GaAsSb control cell were investigated using temperature-dependent current density-voltage (J-V), external quantum efficiency, photoluminescence (PL), and electroluminescence (EL) measurements. Thermally activated defect states associated with the GaAsSb matrix material are found to account for the reduction of the performance of the solar cell. The rapid quenching of the PL and EL intensity, along with the shift (above 150 K) of the dominant recombination process during spontaneous emission (EL), further indicates the prevalence of nonradiative processes at elevated temperatures in these systems. These findings are also supported by a reduction in the open-circuit voltage at elevated temperatures in these devices.
Source: IEEE Journal of Photovoltaics
Institutions: University of Oklahoma, University College London
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
Awards: THE SPECIFLC NASA DIRECTORATE WITH THE MOST DIRECT PARALLEL WITH THIS PROPOSAL IS HUMAN EXPLORATION AND OPERATIONS. THE PROPOSED RESEARCH WOULD BE A, Energy and the Physical Sciences: Semiconductor III-V Quantum-Dot Solar Cells on Silicon Substrates, KEY, CENTRAL OBJECTIVES OF THE PROPOSAL: A. FABRICATION OF NANOSTRUCTURED PHOTOVOLTAIC DEVICES MADE FROM ZNO AND DECORATED WITH NANOPARTICLES. WE BEL
OpenAlex ID: W2782262754