Work

Crystal orientation, crystallinity, and thermoelectric properties of Bi 0.9 Sr 0.1 CuSeO epitaxial films grown by pulsed laser deposition

Year: 2018

Type: article

Abstract: We have grown Bi 0.9 Sr 0.1 CuSeO epitaxial thin films on MgO and SrTiO 3 (STO) single-crystal substrates by pulsed laser deposition (PLD) under various growth conditions, and investigated the crystal orientation, crystallinity, chemical composition, and thermoelectric properties of the films. The optimization of the growth conditions was realized in the film grown on MgO at the temperature T s = 573 K and Ar pressure P Ar = 0.01 Torr in this study, in which there was no misalignment apart from the c -axis and no impurity phase. It was clearly found that the higher crystal orientation of the epitaxial film grown at a higher temperature under a lower Ar pressure mainly enhanced the thermoelectric power factor P (= S 2 /ρ), where S is the Seebeck coefficient and ρ is the electrical resistivity. However, the thermoelectric properties of the films were lower than those of polycrystalline bulk because of lattice distortion from lattice mismatch, a low crystallinity caused by a lower T s , and Bi and Cu deficiencies in the films.

Source: Japanese Journal of Applied Physics

DOI: 10.7567/jjap.57.025502

Authors: Mamoru Ishizawa, Hiroyuki Fujishiro, Tomoyuki Naito, Akihiko Ito, Takashi Goto

Institutions: Iwate University, Yokohama National University, Tohoku University, Institute for Materials Research, Tohoku University

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funders: Institute for Materials Research, Tohoku University, Division of Materials Research

OpenAlex ID: W2784326013

FWCI: 0.262

Cites: 32

Cited by: 3

Related to: 10