Year: 2018
Type: article
Abstract: We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the nanosecond range. Our results show that spin-orbit torque-MRAM allows for fast and low-power write operations, which makes it promising for non-volatile cache memory applications.
Source: IEEE Transactions on Magnetics
Authors: Murat Cubukcu, Olivier Boulle, Nikolai Mikuszeit, Claire Hamelin, Thomas Bracher, Nathalie Lamard, Marie-Claire Cyrille, Liliana Buda-Prejbeanu, Kevin Garello, Ioan Mihai Miron, O. Klein, G. de Loubens, V. V. Naletov, Juergen Langer, Berthold Ocker, Pietro Gambardella, Gilles Gaudin
Institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Spintronique et Technologie des Composants, Laboratoire d'Électronique des Technologies de l'Information, ETH Zurich, Université Paris-Saclay, CEA Paris-Saclay - Etablissement de Saclay, CEA Paris-Saclay, Kazan Federal University, Singulus (Germany)
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2790030313