Work

Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation

Year: 2018

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2018.2813063

Authors: Katja Puschkarsky, Hans Reisinger, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser

Institutions: TU Wien, Infineon Technologies (Germany), Infineon Technologies (Austria)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2790374843

FWCI: 4.872

Cites: 24

Cited by: 118

Related to: 10