Work

Thermal Resistance Model for Standard CMOS Thermoelectric Generator

Year: 2018

Type: article

Abstract: In this paper, an accurate thermal resistance model for a micro-thermoelectric generator (μTEG) designed using standard complementary metal-oxide-semiconductor (CMOS) technology is presented. The optimal dimensions for the μTEG are determined based on the new μTEG thermal model. The presented models are verified with three-dimensional numerical simulations and compared to published experimental results and the presented models exhibited very good accuracy. An improved output power is obtained when using the new thermal resistance model to determine accurate optimal device dimensions. In this paper, a 1-cm2cross sectional area μTEG based on a 0.13 μm UMC standard CMOS technology is proposed. An output power of 9.25 μW is produced at 2.34 K of temperature difference between the hot and cold sides of the μTEG. The introduced compact models for thermal resistance and the delivered power model are compatible with SPICE based simulators and hence can be integrated with circuit simulations.

Source: IEEE Access

DOI: 10.1109/access.2018.2795382

Authors: Eman F. Sawires, Mohamed I. Eladawy, Yehea I. Ismail, Hamdy Abdelhamid

Institutions: Helwan University, Zewail City of Science and Technology, American University in Cairo

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: gold

Estimated APC paid: $2,075