Work

2D GeP: An Unexploited Low‐Symmetry Semiconductor with Strong In‐Plane Anisotropy

Year: 2018

Type: article

Source: Advanced Materials

DOI: 10.1002/adma.201706771

Authors: Liang Li, Weike Wang, Penglai Gong, Xiangde Zhu, Bei Deng, Xingqiang Shi, Guoying Gao, Huiqiao Li, Tianyou Zhai

Institutions: State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Ministry of Education of the People's Republic of China, Hunan Normal University, Southern University of Science and Technology, Chinese Academy of Sciences, High Magnetic Field Laboratory, Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering Tianjin

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Natural Science Foundation of Guangdong Province, Youth Innovation Promotion Association of the Chinese Academy of Sciences

Awards: G1448109583, G1489067678, G2740060945, 双活性P-Ge化合物作为锂离子电池新型负极材料的基础研究, RnCoX3n+2(R=Y,Sc,Zr,Hf,Sm Pr,Ce等,n=1,2,∞,X=Ga,In)化合物中的新超导体探索, G4612877244, G4738581058, II-VI族低维半导体微纳器件的构筑及其光电性能的原位研究, G914622934

OpenAlex ID: W2790545114

FWCI: 13.73

Cites: 55

Cited by: 314

Related to: 10