Work

Double pulse test based switching characterization of SiC MOSFET

Year: 2017

Type: conference-paper

Source: National Power Electronics Conference (NPEC)

DOI: 10.1109/npec.2017.8310478

Authors: S. S. Ahmad, G. Narayanan

Institution: Indian Institute of Science Bangalore

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2790731429

FWCI: 3.094

Cites: 14

Cited by: 61

Related to: 10