Work

Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

Year: 2018

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.5010608

Authors: Esmat Farzana, Elaheh Ahmadi, James S. Speck, Aaron R. Arehart, Steven A. Ringel

Institutions: University of California, Santa Barbara, The Ohio State University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Defense Threat Reduction Agency, Air Force Office of Scientific Research

Awards: G1375200875, G3228853530

OpenAlex ID: W2793579692

FWCI: 4.645

Cites: 40

Cited by: 126

Related to: 10