Work

Chemical Doping Effects of Gas Molecules on Black Phosphorus Field-Effect Transistors

Year: 2018

Type: article

Abstract: Black phosphorus (BP) is a recently rediscovered layered material with outstanding optical and electrical properties. Its large adsorption energy and high surface-to-volume ratio have motivated chemical sensing and doping applications. We analyzed the charge transport properties as BP-based field-effect transistors (FETs) were chemically doped by adsorption of gas molecules. The electron-withdrawing NO 2 and the electron-donating NH 3 molecules were applied to observe p-doping and n-doping behaviors, respectively, in BP channel layer. Y-function method was used to extract the device parameters, allowing us to elucidate the chemical doping effects of different types of gas molecules in BP FETs. Excellent sensing ability of BP-based devices to gas molecules was also demonstrated. Our results provide a facile method to control the device properties of BP-based FET via the chemical doping.

Source: ECS Journal of Solid State Science and Technology

DOI: 10.1149/2.0111807jss

Authors: Suhyun Kim, Geonyeop Lee, Jihyun Kim

Institution: Korea University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $1,950

Funders: National Research Foundation, National Research Foundation of Korea, Ministry of Science and ICT, South Korea, Korea Institute of Energy Technology Evaluation and Planning