Work

Feasible method to fabricate a nickel-nanodot mask on a silicon substrate with conventional thermal annealing

Year: 2018
Type: article
Abstract: In this paper, a simple and feasible method to fabricate a Ni-nanodot mask on a silicon substrate is reported.Without using a high-cost rapid thermal annealing (RTA) furnace, this method was based on the conventional thermal annealing of a Ni layer deposited on a Si substrate.In addition, the influences of the Ni-layer thickness and annealing conditions on the size and density of the Ni nanodots were systematically investigated.The as-prepared Ni nanodots were well distributed, having a uniform size and a regular spherical shape.Moreover, a Si nanopillar array could be fabricated by inductively coupled plasma (ICP) etching using the as-obtained Ni-nanodot array mask.Keywords: Ni nanodot, conventional thermal annealing, ICP, Si nanopillar V ~lanku avtorji opisujejo enostavno in izvedljivo metodo za izdelavo mask iz Ni-nanopik na Si podlagi.Pri tem niso uporabili drage pe~i za hitro termi~no obdelavo, temve~konvencionalni postopek termi~nega `arjenja Ni-plasti nane{ene na Si-podlago.Sistemati~no so tudi raziskali vpliv debeline Ni-plasti in pogojev `arjenja na velikost in gostoto Ni-nanopik.Le-te so bile enakomerno razporejene, bile so enake velikosti in pravilne polkrogli~ne oblike.Poleg tega so avtorji ~lanka pokazali, da se lahko izdelajo matrice sestavljene iz Si-nanostebri~kov s pomo~jo jedkanja z induktivno sklopljeno plazmo (angl.ICP) in uporabo izdelanih Ni-nanopik.
Authors: X. Kuang, J. Tian, H. Guo, Y. Hou, H. Zhang, T. Liu
Language: English
Open Access status: gold
Estimated APC paid: $323
OpenAlex ID: W2796941772
FWCI:
Cites: 20
Cited by: 3
Related to: 10