Work

Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy

Year: 2018

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2018.04.008

Authors: Jun Zheng, Zhi Liu, Yongwang Zhang, Yuhua Zuo, Chuanbo Li, Chunlai Xue, Buwen Cheng, Qiming Wang

Institutions: Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, University of Chinese Academy of Sciences, Minzu University of China

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences, Natural Science Foundation of Beijing Municipality, National Key Research and Development Program of China

Awards: G2220559999, G2495785094, G645486780, G6635312235

OpenAlex ID: W2797333200

FWCI: 2.804

Cites: 24

Cited by: 54

Related to: 10