Year: 2018
Type: article
Abstract: Thermoelectric properties of chromium nitride (CrN)-based films grown on c-plane sapphire by dc reactive magnetron sputtering were investigated. In this work, aluminum doping was introduced in CrN (degenerate n-type semiconductor) by co-deposition. Under the present deposition conditions, over-stoichiometry in nitrogen (CrN 1+δ ) rock-salt structure is obtained. A p-type conduction is observed with nitrogen-rich CrN combined with aluminum doping. The Cr 0.96 Al 0.04 N 1.17 film exhibited a high Seebeck coefficient and a sufficient power factor at 300 °C. These results are a starting point for designing p-type/n-type thermoelectric materials based on chromium nitride films, which are cheap and routinely grown on the industrial scale.
Source: Applied Physics Express
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $510
Awards: G1696766764, G193668846, G2156986825, G2416599479, Epitaxial and nanolaminated scandium-nitride-based thin films for thermoelectrics, G4466992459, Multi-scale Computational-driven design of novel hard nanostructured Caotings, G5434537738, Novel thermoelectrics based on nanostructured chromium nitride thin films, G6444490347, G7751131595, Nitride-based nanostructured novel thermoelectric thin-film materials
OpenAlex ID: W2800602813