Enhanced thermoelectric performance through grain boundary engineering in quaternary chalcogenide Cu2ZnSnSe4
Year: 2018
Type: article
Abstract: Quaternary chalcogenide Cu2ZnSnSe4 (CZTSe) is a promising wide band-gap p-type thermoelectric material. The structure and thermoelectric properties of lead substituted Cu2ZnSn1-xPbxSe4 are investigated. Lead primarily exists in the framework of PbSe as demonstrated by x-ray diffraction and calculation of x-ray absorption near-edge structure spectroscopy. The second phase distributes at the boundaries of CZTSe with thickness in several hundreds of nanometer. With appropriate grain boundary engineering, the enhancement of power factor and a decrease of thermal conductivity can be achieved simultaneously. As a result, a maximum figure of merit zT of 0.45 is obtained for the sample with x=0.02 at 723K.
Source: AIP Advances
DOI: 10.1063/1.5025482
Institutions: Chinese Academy of Sciences, Institute of High Energy Physics, University of Chinese Academy of Sciences, Beijing Synchrotron Radiation Facility, Beijing Institute of Aeronautical Materials, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Rome International Center for Materials Science, Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Frascati
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,350
Award: G2839102620
OpenAlex ID: W2800916355