Work

High-temperature Hall effect in Ga1−xMnxAs

Year: 2004
Type: article
Abstract: The temperature dependence of the Hall coefficient of a series of ferromagnetic ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$ samples is measured in the temperature range $80\mathrm{K}<T<500\mathrm{K}.$ We model the Hall coefficient assuming a magnetic susceptibility given by the Curie-Weiss law, a spontaneous Hall coefficient proportional to ${\ensuremath{\rho}}_{\mathrm{xx}}^{2}(T),$ and including a constant diamagnetic contribution in the susceptibility. For all low resistivity samples this model provides excellent fits to the measured data up to $T=380\mathrm{K}$ and allows extraction of the hole concentration $(p).$ The calculated p are compared to alternative methods of determining hole densities in these materials: pulsed high magnetic field (up to 55 T) technique at low temperatures (less than the Curie temperature), and electrochemical capacitance-voltage profiling. We find that the anomalous Hall effect (AHE) contribution to ${\ensuremath{\rho}}_{\mathrm{xy}}$ is substantial even well above the Curie temperature. Measurements of the Hall effect in this temperature regime can be used as a testing ground for theoretical descriptions of transport in these materials. We find that our data are consistent with recently published theories of the AHE, but they are inconsistent with theoretical models previously used to describe the AHE in conventional magnetic materials.
Language: Latvian
Open Access status: green
OpenAlex ID: W2801568268
FWCI: 3.478
Cites: 22
Cited by: 35
Related to: 10