Work

Observation of Interface between Thermoelectric Material Zn4Sb3 and Electrodes by Resistance Scanning and Seebeck Coefficient Mapping Techniques

Year: 2018

Type: article

Abstract: A ready-for-soldering thermoelectric element composed of Zn4Sb3 with Ni–Al diffusion barrier layer and Cu electrode was fabricated by means of a hot-press method. Batch-to-batch variation of the resistance of the element was within 7%, the average resistance was 3.23 mΩ and the standard deviation 0.25 mΩ. Annealing effects on the interface structure between the electrodes and Zn4Sb3 were investigated using microprobe techniques such as Seebeck coefficient mapping and resistance scanning. The element showed lower Seebeck coefficient and resistivity than those of the pristine Zn4Sb3 without the electrodes. After annealing for 3.6 ks, the Seebeck coefficient and resistivity returned to the intrinsic values of Zn4Sb3. Increased resistivity was clearly observed near electrode/Zn4Sb3 interfaces of all annealed samples. Seebeck coefficient maps also indicated variation near the interfaces, showing good consistency with the resistance variation.

Source: MATERIALS TRANSACTIONS

DOI: 10.2320/matertrans.e-m2018814

Authors: H. Kunioka, H. Obara, A. Yamamoto, T. Iida

Institutions: Tokyo University of Science, National Institute of Advanced Industrial Science and Technology

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funders: Japan Science and Technology Agency, Core Research for Evolutional Science and Technology

OpenAlex ID: W2806442699

FWCI:

Cites: 16

Cited by: 1

Related to: 10