Work

Communication—Light-Induced Plating of Aluminum on Silicon in a Lewis Acidic Chloroaluminate Ionic Liquid

Year: 2018

Type: article

Abstract: Conventional electroplating of aluminum on silicon often requires a seed layer to overcome the high resistivity of the substrate. In this paper, light-induced plating of aluminum directly on a silicon substrate in an ionic liquid is reported. Without any seed layer, the deposited aluminum has good adhesion to the silicon surface. The resistivity of the aluminum deposits is as low as 4 × 10 −6 Ω-cm, which is only about 1.5 times that of bulk aluminum. The suitable wavelength for the light source is 600 nm to 1,000 nm. The effect of plating temperature on morphology of the aluminum deposits is analyzed.

Source: Journal of The Electrochemical Society

DOI: 10.1149/2.0731809jes

Authors: Laidong Wang, Wen-Hsi Huang, Woo Jung Shin, Meng Tao, Bowen Deng, Dihua Wang

Institutions: Arizona State University, Wuhan University

Language: English

Topic: Electrodeposition and Electroless Coatings

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $1,950

Funders: National Science Foundation, U.S. Department of Energy, Division of Chemical, Bioengineering, Environmental, and Transport Systems