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Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

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Year: 2018
Type: review
Source: Advanced Materials
DOI: 10.1002/adma.201706262
Authors: Feng Teng, Kai Hu, Weixin Ouyang, Xiaosheng Fang
Institution: Fudan University
Language: English

Topic: Advanced Semiconductor Detectors and Materials
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Science and Technology Commission of Shanghai Municipality
Awards: 新型核壳结构微米线异质结雪崩紫外探测器的制备及其内在物理机理研究, G6030867391, G6951065722, 基于金属纳米粒子 / II-VI族低维半导体复合纳米结构的紫外光探测器的性能调控与机理研究, G8043531623, G8867469901
OpenAlex ID: W2807843822
FWCI: 2.384
Cites: 268
Cited by: 514
Related to: 10
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