First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application
Year: 2018
Type: article
Abstract: A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.
Source: Materials science forum
Authors: Ming Hung Weng, Muhammad I. Idris, S. Wright, David T. Clark, R.A.R. Young, J.R. McIntosh, D.L. Gordon, Alton B. Horsfall
Institution: Newcastle University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Funder: Newcastle University
OpenAlex ID: W2807917499