Work

Evaluation of 10-nm Bulk FinFET RF Performance—Conventional Versus NC-FinFET

Year: 2018

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2018.2846026

Authors: R. Singh, K. Aditya, S. S. Parihar, Y. S. Chauhan, R. Vega, T. B. Hook, A. Dixit

Institutions: Indian Institute of Technology Delhi, Indian Institute of Technology Kanpur, IBM (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Department of Science and Technology, Ministry of Science and Technology, India

Award: G3295088819

OpenAlex ID: W2808398937

FWCI: 3.203

Cites: 38

Cited by: 66

Related to: 10