Year: 2018
Type: article
Abstract: Photoemission features associated with states deep in the band gap of $n\ensuremath{-}\mathrm{SrTi}{\mathrm{O}}_{3}(001)$ are found to be ubiquitous in bulk crystals and epitaxial films. These features are present even when there is little signal near the Fermi level. Analysis reveals that these states are deep-level traps associated with defects. The commonly investigated defects---O vacancies, Sr vacancies, and aliovalent impurity cations on the Ti sites---cannot account for these features. Rather, ab initio modeling points to these states resulting from interstitial oxygen and its interaction with donor electrons.
Language: Latvian
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funders: National Science Foundation, U.S. Department of Energy, University of Minnesota, Diamond Light Source, Office of Science, Engineering and Physical Sciences Research Council, Division of Materials Research, Biological and Environmental Research, Air Force Office of Scientific Research, Pacific Northwest National Laboratory, Division of Materials Sciences and Engineering
OpenAlex ID: W2808447649
